DI-UMONS : Dépôt institutionnel de l’université de Mons

Recherche transversale
(titres de publication, de périodique et noms de colloque inclus)
2018-06-22 - Colloque/Présentation - communication orale - Anglais - 1 page(s)

Panepinto Adriano , Cormier Pierre-Antoine, Snyders Rony , "Synthesis of N-doped TiO2 by combining reactive magnetron sputtering and ion implantation for dye-sensitized solar cells applications" in E-MRS 2018 Spring Meeting, Strasbourg, France, 2018

  • Codes CREF : Chimie (DI1300)
  • Unités de recherche UMONS : Chimie des interactions plasma-surface (S882)
  • Instituts UMONS : Institut de Recherche en Science et Ingénierie des Matériaux (Matériaux)
Texte intégral :

Abstract(s) :

(Anglais) In this work, we propose to develop a new type of semi-conductor structure that can be implemented in the photoanode of dye-sensitized solar cells (DSSCs): anatase/rutile bi-layered N-doped TiO2. We investigated the synthesis of this material by two different ways: co-Reactive Magnetron Sputtering in Ar/O2/N2 mixture; and combination of RMS (Ar/O2 mixture) and Nitrogen Ions Implantation (NII). For the co-RMS method, our strategy consists on a systematic evaluation of the influence of the sputtering gas composition on the crystalline, the chemical and the optical properties of the films. For the hybrid method, our strategy consists first on optimizing the titania bi-layered crystalline structure by playing on the plasma discharge. Then, a systematic evaluation of the ion beam parameters such as the dose, the ion energy and the incident angle was performed in order to study the implantation spot and the properties of the films. Preliminary data reveal that the bi-layered crystalline structure cannot be obtained by co-RMS but we demonstrated that N atoms position can be easily controlled, promoting their insertion at substitutional sites into the TiO2 lattice by tunning the gas mixture. Using NII, as expected, the concentration and the position of the N atoms mainly depend on the ion dose and energy. Based on the results, we finally conclude that ion implantation leads to very low nitrogen content (≤ 1%) while co-RMS tends to synthesize oxynitride films (3% ≤ [N] ≤ 14%).