DI-UMONS : Dépôt institutionnel de l’université de Mons

Recherche transversale
(titres de publication, de périodique et noms de colloque inclus)
2013-05-29 - Colloque/Présentation - communication orale - Anglais - 15 page(s)

Konstantinidis Stéphanos , Geumez Gilles, Van Regemorter Tanguy, Cornil Jérôme , Snyders Rony , "OXYGEN-DEFICIENT ZIRCONIA THIN FILMS SYNTHESIZED BY REACTIVE MAGNETRON SPUTTERING." in ICMCTF, San Diego, USA, 2013

  • Codes CREF : Chimie des surfaces et des interfaces (DI1327)
  • Unités de recherche UMONS : Chimie des interactions plasma-surface (S882)
  • Instituts UMONS : Institut de Recherche en Science et Ingénierie des Matériaux (Matériaux)
  • Centres UMONS : Centre d’Innovation et de Recherche en Matériaux Polymères (CIRMAP)

Abstract(s) :

(Anglais) Zirconium oxide (ZrOx) thin films were synthesized by DC reactive magnetron sputtering. A 3 cm- in diameter zirconium target was sputtered in Ar/O2 atmospheres (10mTorr). During the deposition process, the oxygen flow was controlled by means of a Plasma Emission Monitoring (PEM) device (speedflo, Gencoa Ltd.) by monitoring the Zr I lines. PEM allowed growing ZrOx films inside the so – called metal-oxide transition. X-Ray Photoelectron Spectroscopy data revealed that the films synthesized in the transition region are oxygen-deficient: ~10% of oxygen vacancies are incorporated in these films. The X-Ray Diffraction (XRD) patterns of these films exhibit reflections related to the high-temperature tetragonal and/or cubic phase of ZrO2. In contrast, XRD patterns of the stoichiometric films deposited in the fully oxidized regime present reflections emanating from the low-temperature stable monoclinic phase. Our data reveal that the film chemistry, especially the incorporation of oxygen vacancies, is a key feature for controlling the phase constitution of zirconia thin films. Quantum-chemical calculations based on the Density Functional Theory method are consistent with these experimental observations. As oxygen vacancies are introduced in the ZrO2 cell, the cubic phase is stabilized (by 20 meV/at. with ~10% of O vacancies in the cell) at the expense of the monoclinic structure. Finally, the oxygen-deficient 100 nm-thick films were annealed in air for 2 hours. It was found that the tetragonal/cubic phase was preserved up to 600°C.