DI-UMONS : Dépôt institutionnel de l’université de Mons

Recherche transversale
(titres de publication, de périodique et noms de colloque inclus)
2013-07-07 - Colloque/Présentation - communication orale - Anglais - 30 page(s)

Konstantinidis Stéphanos , "Plasma chemistry and energetics during the synthesis of metal oxide thin films by High Power Impulse Magnetron Sputtering" in EMRS, Strasbourg, France, 2013

  • Codes CREF : Chimie des surfaces et des interfaces (DI1327)
  • Unités de recherche UMONS : Chimie des interactions plasma-surface (S882)
  • Instituts UMONS : Institut de Recherche en Science et Ingénierie des Matériaux (Matériaux)
  • Centres UMONS : Centre d’Innovation et de Recherche en Matériaux Polymères (CIRMAP)

Abstract(s) :

(Anglais) High-Power Impulse Magnetron Sputtering (HiPIMS) is a technology that belongs to the field of Ionized PVD of thin films. In HiPIMS, the peak power and current delivered to the plasma during the pulse typically reach the kW/cm2 and the A/cm2 range, respectively. The ionization degree of the film forming species is significantly increased and film growth is assisted by an intense ion flux. Reports have re ealed the significant enhancement of the film properties as the HiPIMS technology is used. However, a decrease of the deposition rate, as compared to the conventional DC magnetron sputtering (DCMS) process, is commonly observed during HiPIMS. In this contribution, the evolution of the plasma chemistry and the deposition of energy at the substrate as obtained from advanced plasma diagnostic tools will be presented; the sputtering of titanium and tungsten metallic targets in an Ar/O2 atmosphere being chosen as model systems. These data will be exploited to get a better insight into the complex reactive HiPIMS process. As an example, we will show that the deposition rate measured during the synthesis of WO3 films by reactive HiPIMS increases, above the DCMS threshold, as a result of the appropriate combination of the discharge parameters. This behavior is likely to be caused by the evaporation of the low melting point WO3 layer covering the metallic target in such working conditions.