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2016-09-06 - Colloque/Article dans les actes avec comité de lecture - Anglais - 4 page(s)

Tang X., Debliquy Marc , Lahem Driss, Flandre Denis, André Nicolas, Walewijns Thomas, Francis Laurent, Raskin J.-P., "A hybrid graphene-metal oxide sensor for formaldehyde detection at room temperature" in 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) , 978-1-4673-9719-3, Hangzhou, China, 2016

  • Codes CREF : Capteurs et périphériques (DI2563), Matériaux optiques (DI1256)
  • Unités de recherche UMONS : Science des Matériaux (F502)
  • Instituts UMONS : Institut de Recherche en Science et Ingénierie des Matériaux (Matériaux)
  • Centres UMONS : Ingénierie des matériaux (CRIM)

Abstract(s) :

(Anglais) Formaldehyde detection is important for protecting human health and controlling environment pollution. Many metal oxide sensors have been developed for formaldehyde detection in the last decade. The NiO sensor is considered as the most sensitive one, which is able to detect very low concentration of formaldehyde (< 1 ppm). But it needs a high operating temperature. Nowadays, graphene has attracted much attention for sensor applications due to its high surface-to-volume ratio allowing the total exposure of all atoms to the environment and its high carrier mobility ensuring low electrical noise and low power consumption. However, pristine graphene is chemically inert and shows weak adsorption of formaldehyde molecules. To obtain stronger adsorption ability, leading to a higher sensitivity, it is necessary to functionalize or pretreat graphene. In this study, we design a new hybrid sensor, in which graphene acts as a highly conductive network and NiO as a sensitive layer for formaldehyde. This hybrid sensor combines the advantages of the both materials. Comparing to the pure graphene sensor and NiO sensor, the hybrid sensor operates at room temperature and shows several better sensing performances (faster response and recovery). This sensor can be easily integrated with complementary metal oxide semiconductor (CMOS) chip in the future.