DI-UMONS : Dépôt institutionnel de l’université de Mons

Recherche transversale
(titres de publication, de périodique et noms de colloque inclus)
2008-06-01 - Article/Dans un journal avec peer-review - Anglais - 7 page(s)

Huang Y.S., Westenhoff S., Avilov I.V., Sreearunothai P., Hodgkiss J.M., Deleener C., Friend R.H., Beljonne David , "Electronic Structures of Interfacial States Formed at Polymeric Semiconductor Heterojunctions" in Nature Materials, 7, 6, 483-489

  • Edition : Nature Publishing Group, London (United Kingdom)
  • Codes CREF : Chimie des surfaces et des interfaces (DI1327)
  • Unités de recherche UMONS : Chimie des matériaux nouveaux (S817)
  • Instituts UMONS : Institut de Recherche en Science et Ingénierie des Matériaux (Matériaux)
Texte intégral :

Abstract(s) :

(Anglais) Heterojunctions between organic semiconductors are central to the operation of light-emitting and photovoltaic diodes, providing respectively for electron-hole capture and separation. However, relatively little is known about the character of electronic excitations stable at the heterojunction. We have developed molecular models to study such interfacial excited electronic excitations that form at the heterojunction between model polymer donor and polymer acceptor systems: poly(9,9-dioctylfluorene-co-bis-N,N-(4-butylphenyl)-bis-N,N-phenyl-1,4-phenylenediamine) (PFB) with poly(9,9-dioctylfluorene-co-benzothiadiazole) (F8BT), and poly(9,9-dioctylfluorene-co-N-(4-butylphenyl)diphenylamine) (TFB) with F8BT. We find that for stable ground-state geometries the excited state has a strong charge-transfer character. Furthermore, when partly covalent, modelled radiative lifetimes (~10-7s) and off-chain axis polarization (30°) match observed `exciplex' emission. Additionally for the PFB:F8BT blend, geometries with fully ionic character are also found, thus accounting for the low electroluminescence efficiency of this system.

Notes :
  • (Anglais) Publié en ligne le 27 avril 2008
Identifiants :
  • DOI : 10.1038/nmat2182