DI-UMONS : Dépôt institutionnel de l’université de Mons

Recherche transversale
Rechercher
(titres de publication, de périodique et noms de colloque inclus)
2014-12-08 - Colloque/Présentation - communication orale - Anglais - 20 page(s)

Scardamaglia Mattia, Struzzi Claudia, Osella Silvio, N. Reckinger, Colomer Jean-François, Amati Matteo, Alexey Barinov, Gregoratti Luca, Petaccia Luca, Snyders Rony , Beljonne David , Bittencourt Carla , "Tuning nitrogen species: a way to control the doping of N-graphene" in Groupe de Contact Rayonnement Synchrotron, Namur, Belgium, 2014

  • Codes CREF : Physique des surfaces (DI1265), Physique des plasmas (DI1233)
  • Unités de recherche UMONS : Chimie des interactions plasma-surface (S882)
  • Instituts UMONS : Institut de Recherche en Science et Ingénierie des Matériaux (Matériaux)
  • Centres UMONS : Centre d’Innovation et de Recherche en Matériaux Polymères (CIRMAP)

Abstract(s) :

(Anglais) Nitrogen doped graphene gained a lot of interest in recent years from both technological and fundamental point of view. It has a remarkably potential in graphene-based electronics and devices due to the activation of its surface caused by the dopant atoms and to the induced doping. Nevertheless, a precise control over the different nitrogen configurations that can be obtained is still lacking and this blank makes difficult the fully knowledge of how the different kinds of C-N bonds act in the modification of the electronic properties of graphene. Within this context, we investigated the different contribution to charge carrier doping of nitrogen functionalities (graphitic and pyridinic) in nitrogen doped graphene by means of high resolution angular resolved photoemission spectroscopy and photoelectron spectromicroscopy techniques. With post-synthesis doping through nitrogen plasma and subsequent annealing treatments it is possible to tune the ratio between graphitic and pyridinic nitrogen on graphene flakes grown on copper foils and unravel the actual doping by studying the Dirac cone shift. Supported by DFT calculations, we clarify the role of graphic nitrogen as the responsible for n-doping when the hindering action of pyridinic is quenched by annealing. The possibility to handle the charge carrier doping on the same graphene sample is fascinating and potentially useful for the integration in electronic devices.