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2013-07-21 - Article/Dans un journal avec peer-review - Anglais - 6 page(s)

Cormier Pierre-Antoine , Thomann AL, Dolique V., balhamri a., Dussart R, semnar n., Lecas T., Brault P., Snyders Rony , Konstantinidis Stéphanos , "IR emission from the target during plasma magnetron sputter deposition" in Thin Solid Films, 545, 44-49

  • Edition : Elsevier Science
  • Codes CREF : Physique de l'état solide (DI1261), Physique des surfaces (DI1265), Chimie des solides (DI1316), Physique des plasmas (DI1233), Sciences exactes et naturelles (DI1000)
  • Unités de recherche UMONS : Chimie des interactions plasma-surface (S882)
  • Instituts UMONS : Institut de Recherche en Science et Ingénierie des Matériaux (Matériaux)
  • Centres UMONS : Centre d’Innovation et de Recherche en Matériaux Polymères (CIRMAP)

Abstract(s) :

(Anglais) n this article, energy flux measurements at the substrate location are reported. In particular, the energy flux re- lated to IR radiation emanating from the titanium (10 cm in diam.) target surface is quantified during magnetron sputter deposition processes. In order to modulate the plasma–target surface interaction and the radiative energy flux thereof, the working conditions were varied systematically. The experiments were performed in balanced and unbalanced magnetic field configurations with direct current (DC), pulsed DC and high power impulse mag- netron sputtering (HiPIMS) discharges. The power delivered to the plasma was varied too, typically from 100 to 800 W. Our data show that the IR contribution to the total energy flux at the substrate increases with the supplied sputter power and as the discharge is driven in a pulse regime. In the case of HiPIMS discharge generated with a balanced magnetic field, the energy flux associated to the IR radiation produced by the target becomes compara- ble to the energy flux originating from collisional processes (interaction of plasma particles such as ions, electron, sputtered atoms etc. with the substrate). From IR contribution, it was possible to estimate the rise of the target surface temperature during the sputtering process. Typical values found for a titanium target are in the range 210 °C to 870 °C.