Abstract(s) :
(Anglais) When ionizing radiations collide with a semiconductor, they create electron-hole pairs. α and β particles progressively lose their kinetic energy when crossing the material. γ rays pass through or are absorbed (photoelectric, Compton effect or e+e- pair production), creating secondary charged particles if absorbed. Neutron particles interact with nuclei either elastically or inelastically, involving Si atoms recoil or secondary particles. Depending on the nature and energy of the ionizing radiations, their stopping power in matter is different.
In this paper, we aim to determine the charge (number of deposited electron-hole pairs) in a block of silicon created by ionizing radiations. This is done by simulating a block of silicon irradiated in different conditions, with the Geant4 program.