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2007-02-26 - Article/Dans un journal avec peer-review - Anglais - 14 page(s)

Snyders Rony , Dauchot J-P., Hecq Michel, "Synthesis of metal oxide thin films by reactive magnetron sputtering in Ar/O2 mixtures: an experimental study of the chemical mechanism" in Plasma Processes and Polymers, 4, 2, 113-126

  • Edition : Wiley, Weinheim (Germany)
  • Codes CREF : Chimie des solides (DI1316), Physique des plasmas (DI1233)
  • Unités de recherche UMONS : Chimie des interactions plasma-surface (S882)
  • Instituts UMONS : Institut de Recherche en Science et Ingénierie des Matériaux (Matériaux)
Texte intégral :

Abstract(s) :

(Anglais) One of the major limitations of reactive magnetron sputtering (RMS) is the low deposition rate when the target is poisoned. With the goal of reducing this phenomenon, we studied the chemical mechanisms involved during conventional and ionized reactive magnetron sputtering (iRMS) of metals (Sn, Ti, Ag) in Ar/O2 mixtures. Target surface, plasma and film compositions were characterized by target voltage, MS and XPS measurements, respectively. Comparing films and plasma compositions, we demonstrated that oxide film formation proceeds by condensation of sputtered material and reaction between the growing film and the reactive species, especially O. Using iRMS, we promoted the latter process: for example, we prepared fully oxidized Sn films using low O2 flows which limits target poisoning and, in turn, increases the deposition rate (6 times).

Notes :
  • (Anglais) Lecture en ligne: http://onlinelibrary.wiley.com/doi/10.1002/ppap.200600103/pdf
Identifiants :
  • DOI : 10.1002/ppap.200600103