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2008-04-14 - Article/Dans un journal avec peer-review - Anglais - 4 page(s)

Emmerlich J., Mraz S., Snyders Rony , Jiang K., Schneider J-M., "The physical reason for the apparently low deposition rate during high power pulsed magnetron sputtering" in Vacuum, 82, 8, 867-870

  • Edition : Pergamon Press
  • Codes CREF : Chimie des solides (DI1316), Physique des plasmas (DI1233)
  • Unités de recherche UMONS : Chimie des interactions plasma-surface (S882)
  • Instituts UMONS : Institut de Recherche en Science et Ingénierie des Matériaux (Matériaux)
Texte intégral :

Abstract(s) :

(Anglais) In high-power pulsed magnetron sputtering, a large power density is applied giving rise to a high degree of ionization. From an application point of view, the major drawback of this technology is the considerably lower deposition rate as compared to DC magnetron sputtering. Using transport-of-ions-in-matter simulations, we show that the apparently low deposition rate can be understood based on the non-linear energy dependence of the sputtering yields. Our calculations are consistent with deposition-rate measurements on Cu films as well as with published deposition-rate data for Ti [Konstantinidis S, Dauchot JP, Ganciu M, Ricard A, Hecq M. J Appl Phys 2006;99:013307].

Notes :
  • (Anglais) Publié en ligne le 7 novembre 2007
  • (Anglais) Lecture en ligne: http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6TW4-4R3352S-1-5&_cdi=5552&_user=532054&_pii=S0042207X07003703&_origin=search&_coverDate=04%2F14%2F2008&_sk=999179991&view=c&wchp=dGLbVzb-zSkzS&md5=53e87b7dc235ae9d49ce64d58c6feb22&ie=/sdarticle.pdf
Identifiants :
  • DOI : 10.1016/j.vacuum.2007.10.011